Diagnostics of Si multi-delta-doped GaAs layers by Raman spectroscopy on bevelled structures

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SYSNO ASEP	0133764
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Diagnostics of Si multi-delta-doped GaAs layers by Raman spectroscopy on bevelled structures
Author(s)	Srnanek, R. (SK) Gurnik, P. (SK) Harmatha, L. (SK) Gregora, Ivan (FZU-D)_{RID, ORCID}
Source Title	Applied Surface Science. - : Elsevier - ISSN 0169-4332 Roč. 183, - (2002), s. 86-92
Number of pages	7 s.
Language	eng - English
Country	NL - Netherlands
Keywords	delta-doped layers ; micro-Raman ; GaAs ; Si-doping
Subject RIV	BM - Solid Matter Physics ; Magnetism
CEZ	AV0Z1010914 - FZU-D
Annotation	A new procedure for determination of the doping spikes location and the spatial extent of dopants in Si single and multi-ë-doped layers by micro-Raman spectroscopy is presented. The obtained values of Si extent from 4.0 to 4.5 nm are in good coincidence with values presented in the literature.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2003

Number of the records: 1