0133764 - FZU-D 20020145 RIV NL eng J - Journal Article
Srnanek, R. - Gurnik, P. - Harmatha, L. - Gregora, Ivan
Diagnostics of Si multi-delta-doped GaAs layers by Raman spectroscopy on bevelled structures.
Applied Surface Science. Roč. 183, - (2002), s. 86-92. ISSN 0169-4332. E-ISSN 1873-5584
Grant - others:VEGA(SK) 1/7600/20; VEGA(SK) 1/6098/99; VEGA(SK) 1/7613/20
Institutional research plan: CEZ:AV0Z1010914
Keywords : delta-doped layers * micro-Raman * GaAs * Si-doping
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.295, year: 2002

A new procedure for determination of the doping spikes location and the spatial extent of dopants in Si single and multi-ë-doped layers by micro-Raman spectroscopy is presented. The obtained values of Si extent from 4.0 to 4.5 nm are in good coincidence with values presented in the literature.
Permanent Link: http://hdl.handle.net/11104/0000631