Number of the records: 1  

Anomalous hall effect in ferromagnetic semiconductors

  1. 1.
    SYSNO ASEP0133744
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JOstatní články
    TitleAnomalous hall effect in ferromagnetic semiconductors
    Author(s) Jungwirth, Tomáš (FZU-D) RID, ORCID
    Niu, Q. (US)
    MacDonald, A. H. (US)
    Source TitlePhysical Review Letters. - : American Physical Society - ISSN 0031-9007
    Roč. 88, č. 20 (2002), s. 207208-1-207208-4
    Number of pages4 s.
    Languageeng - English
    CountryUS - United States
    Keywordsferromagnetic semiconductors ; anomalous Hall effect
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGA202/02/0912 GA ČR - Czech Science Foundation (CSF)
    OC P5.10 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    CEZAV0Z1010914 - FZU-D
    AnnotationThe anomalous Hall effect in ferromagnetic semiconductors is studied theoretically.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2003

Number of the records: 1  

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