Number of the records: 1
Photoluminescence of Ga.sub.0.94./sub.In.sub.0.06./sub.As.sub.0.13./sub.Sb.sub.0.87./sub. solid solution lattice matched to InAs
- 1.0133729 - FZU-D 20020110 RIV NL eng J - Journal Article
Moiseev, K. D. - Mikhailova, M. P. - Yakovlev, Yu. P. - Šimeček, Tomislav - Hulicius, Eduard - Oswald, Jiří
Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs.
Optical Materials. Roč. 19, - (2002), s. 455-459. ISSN 0925-3467. E-ISSN 1873-1252
R&D Projects: GA AV ČR IAA1010807
Grant - others:GA(XX) 990218330
Institutional research plan: CEZ:AV0Z1010914
Keywords : semiconductors III-V * photoluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.879, year: 2002
High quality epitaxial layers of GaIn0.06As0.13Sb quaternary solid solution with low In content were grown by LPE lattice matched to InAs substrate. The main types of radiative transitions for intentionally undoped p-type and for Te doped n-type GaIn0.06As0.13Sb solid solution were determined.
Permanent Link: http://hdl.handle.net/11104/0031690
Number of the records: 1