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Relaxation of electron energy in polar semiconductor double dots
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SYSNO ASEP 0133721 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Relaxation of electron energy in polar semiconductor double dots Author(s) Král, Karel (FZU-D) RID
Khás, Zdeněk (FZU-D)
Zdeněk, Petr (FZU-D)
Čerňanský, Marian (FZU-D) RID
Lin, C. Y. (TW)ISBN 1-4020-0578-4 Source Title Molecular Low Dimensional and Nanostructured Materials for Advanced Applications / Graja A.. - Dordrecht : Kluwer Academic Publishers, 2002 Pages s. 267-271 Number of pages 5 s. Action Proceedings of the NATO Advanced Research Workshop on Molecular Low Dimensional and Nanostructured Materials for Advanced Applications Event date 01.09.2001-05.09.2001 VEvent location Poznaň Country PL - Poland Event type EUR Language eng - English Country NL - Netherlands Keywords quantum dots ; electron energy ; relaxation ; semiconductors Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects IAA1010113 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) OC P5.20 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z1010914 - FZU-D Annotation Theory of the electron energy relaxation in the double quantum dots, important from the point of view of quantum computing, is developed. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2003
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