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Self-compensating incorporation of Mn in Ga.sub.1-x./sub.Mn.sub.x./sub.As
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SYSNO ASEP 0133654 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Self-compensating incorporation of Mn in Ga1-xMnxAs Author(s) Mašek, Jan (FZU-D) RID
Máca, František (FZU-D) RID, ORCIDSource Title Acta Physica Polonica A. - : Polska Akademia Nauk - ISSN 0587-4246
Roč. 100, č. 3 (2001), s. 319-325Number of pages 7 s. Action International School of Semiconducting Compounds /30./ Event date 00.00.2001 VEvent location Jaszowiec Country PL - Poland Event type WRD Language eng - English Country PL - Poland Keywords hypotetical Ga1-xMnxAs ; electronic structure Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects OC P3.80 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z1010914 - FZU-D Annotation We consider hypothetical Ga7MnAs8, Ga16MnAs16, and Ga14Mn3As16 crystals with Mn in a substitutional, interstitial, and both positions. Spin-polarized full-potential linearized augmunted plane wave calculations were used to obtain their electronic structure. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2002
Number of the records: 1