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Transition metal 3d states in HgSe-based diluted magnetic semiconductors
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SYSNO ASEP 0133615 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Transition metal 3d states in HgSe-based diluted magnetic semiconductors Author(s) Guziewicz, E. (PL)
Kowalski, B. J. (PL)
Mašek, Jan (FZU-D) RID
Orlowski, B. A. (PL)
Johnson, R. L. (DE)Source Title Journal of Alloys and Compounds. - : Elsevier - ISSN 0925-8388
Roč. 328, - (2001), s. 119-125Number of pages 7 s. Language eng - English Country CH - Switzerland Keywords diluted magnetic semiconductors ; resonant photoemission ; electronic band structure Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z1010914 - FZU-D Annotation The contribution of transition metal 3d states to the valence band of HgSe doped with Mn, Fe, and Co was investigated by resonant photoemission and CPA calculations. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2002
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