Silicon-based light-emitting materials:implanted SiO.sub.2./sub. films and wide bandgap a-Si:H

0133478 - FZU-D 20010330 RIV US eng C - Conference Paper (international conference)
Pelant, Ivan - Luterová, Kateřina - Fojtík, Petr - Rehspringer, J. L. - Muller, D. - Grob, J. J. - Dian, J. - Valenta, J. - Tomasiunas, R. - Hönerlange, B.
Silicon-based light-emitting materials:implanted SiO₂ films and wide bandgap a-Si:H.
0-8197-4120-1. In: Optical Organic and Inorganic Materials. Bellingham: SPIE, 2001 - (Ašmontas, S.; Gradauskas, J.), s. 66-75. Proceedings of SPIE., 4415. ISSN 0277-786X.
[International Conference on Advanced Materials and Devices /2./. Vilnius (LT), 16.04.2000-19.04.2000]
Institutional research plan: CEZ:AV0Z1010914
Keywords : amorphous silicon * implanted SiO₂ * silicon nanocrystals * photoluminescence * electroluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism

We review critically recent results of investigation of hydrogenated amorphous silicon (a-Si:H) and Si.sup.+ implanted SiO2 films from point of view of light-emission applications. Wide bandgap a-Si:H with the energy gap ranging from 2.0 to 2.2 eV exhibits room temperature photoluminescence in the visible region.
Permanent Link: http://hdl.handle.net/11104/0031443