Number of the records: 1
A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers
- 1.
SYSNO ASEP 0133405 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers Author(s) Švrček, Vladimír (FZU-D)
Pelant, Ivan (FZU-D) RID, ORCID, SAI
Kočka, Jan (FZU-D) RID, ORCID, SAI
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Toušek, J. (CZ)
Kondo, M. (JP)
Matsuda, A. (JP)Source Title Philosophical Magazine Letters. - : Taylor & Francis - ISSN 0950-0839
Roč. 81, č. 6 (2001), s. 405-410Number of pages 6 s. Language eng - English Country GB - United Kingdom Keywords surface photvoltage ; microcrystalline silicon ; diffusion length Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA202/98/0669 GA ČR - Czech Science Foundation (CSF) IAA1010809 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ A02/98:Z1-010-914 Annotation A new approach to the surface photovoltage method is demonstrated on thick undoped microcrystalline silicon films grown on different substrates. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2002
Number of the records: 1