Microcrystalline silicon - relation between transport and microstructure

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SYSNO ASEP	0133391
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Microcrystalline silicon - relation between transport and microstructure
Author(s)	Kočka, Jan (FZU-D)_{RID, ORCID, SAI} Stuchlíková, Hana (FZU-D) Stuchlík, Jiří (FZU-D)_{RID, ORCID} Rezek, Bohuslav (FZU-D)_{RID, ORCID} Švrček, Vladimír (FZU-D) Fojtík, Petr (FZU-D) Pelant, Ivan (FZU-D)_{RID, ORCID, SAI} Fejfar, Antonín (FZU-D)_{RID, ORCID, SAI}
Source Title	Solid State Phenomena - ISSN 1012-0394 80-81, - (2001), s. 213-224
Number of pages	12 s.
Language	eng - English
Country	CH - Switzerland
Keywords	microcrystalline silicon ; transport ; microstructure
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GA202/98/0669 GA ČR - Czech Science Foundation (CSF)
	IAA1010809 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	A02/98:Z1-010-914
Annotation	Intrinsic microcrystalline silicon samples were prpared close to the border between microcrystalline and amorphous grouwth in order to obtain a thick transition layer which allowed a detailed study of relation of transport and microstructure.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2002

Number of the records: 1