0133092 - FZU-D 20000455 RIV US eng C - Conference Paper (international conference)
Šimeček, Tomislav - Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Čapek, Pavel - Heime, K. - Behres, A. - Joullié, A. - Christol, P.
Mid-infrared semiconductor lasers.
ASDAM 2000. Conference proceedings. Danvers: IEEE, 2000 - (Osvald, J.; Haščík, Š.; Kuzmík, J.; Breza, J.), s. 105-108. ISBN 0-7803-5939-9.
[International EuroConference on Advanced Semiconductor Devices and Microsystems /3./ ASDAM 2000. Smolenice Castle (SK), 16.10.2000-18.10.2000]
R&D Projects: GA ČR GA102/99/0414
EU Projects: European Commission(XE) BRPR970466 - ADMIRAL
Grant - others:European Community(XE) IC20-CT97-0007; European Community(XE) BE97-4155-ADMIRAL
Institutional research plan: CEZ:AV0Z1010914
Subject RIV: BM - Solid Matter Physics ; Magnetism

For mid infrared semiconductor lasers the most important goal is to overcome the nonradiatiive recombination processes and to improve the important laser parameters, including temperature dependence of the threshold current, maximum attainable optical power, spectral purity and lifetime expectancy. Recently several new physical concepts have beenadopted.
Permanent Link: http://hdl.handle.net/11104/0031080