Number of the records: 1  

InAs/GaAs lasers with very thin active layer

  1. 1.
    0133088 - FZU-D 20000451 RIV NL eng J - Journal Article
    Oswald, Jiří - Hulicius, Eduard - Pangrác, Jiří - Melichar, Karel - Šimeček, Tomislav - Petříček, Otto - Vančura, Milan - Hradil, J.
    InAs/GaAs lasers with very thin active layer.
    Thin Solid Films. Roč. 380, - (2000), s. 233-236. ISSN 0040-6090. E-ISSN 1879-2731
    R&D Projects: GA AV ČR IAA1010807; GA ČR GA102/99/0414
    Institutional research plan: CEZ:AV0Z1010914
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.160, year: 2000

    InAs/GaAs laser structures based on atomically thin InAs strained quantum wells were prepared by metal-organic vapour phase epitaxy. The dependence of electroluminescence spectra on the thickness, as well as on the number of InAs quantum wells, was studied.
    Permanent Link: http://hdl.handle.net/11104/0031076

     
     

Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.