Number of the records: 1  

Deep levels in GaAs due to Si .delta. doping

  1. 1.
    SYSNO0133068
    TitleDeep levels in GaAs due to Si .delta. doping
    Author(s) Hubík, Pavel (FZU-D) RID, ORCID
    Krištofik, Jozef (FZU-D) RID
    Mareš, Jiří J. (FZU-D) RID, ORCID
    Malý, Jan (FZU-D)
    Hulicius, Eduard (FZU-D) RID, ORCID, SAI
    Pangrác, Jiří (FZU-D) RID, ORCID, SAI
    Source Title Journal of Applied Physics. Roč. 88, č. 11 (2000), s. 6488-6494. - : AIP Publishing
    Document TypeČlánek v odborném periodiku
    Grant GA202/99/0410 GA ČR - Czech Science Foundation (CSF)
    IAA1010806 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    IAA1010807 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z1010914 - FZU-D
    Languageeng
    CountryUS
    Permanent Linkhttp://hdl.handle.net/11104/0031058
     

Number of the records: 1  

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