Deep levels in GaAs due to Si .delta. doping

Number of the records: 1

SYSNO ASEP	0133068
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Deep levels in GaAs due to Si .delta. doping
Author(s)	Hubík, Pavel (FZU-D)_{RID, ORCID} Krištofik, Jozef (FZU-D)_RID Mareš, Jiří J. (FZU-D)_{RID, ORCID} Malý, Jan (FZU-D) Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI}
Source Title	Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979 Roč. 88, č. 11 (2000), s. 6488-6494
Number of pages	7 s.
Language	eng - English
Country	US - United States
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GA202/99/0410 GA ČR - Czech Science Foundation (CSF)
	IAA1010806 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	IAA1010807 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z1010914 - FZU-D
Annotation	Delta(Si)-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitance-voltage and deep level transient spectroscopy techniques. A ditailed analysis of the DLTS signal is performed.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2001

Number of the records: 1