Number of the records: 1
Deep levels in GaAs due to Si .delta. doping
- 1.Hubík, Pavel - Krištofik, Jozef - Mareš, Jiří J. - Malý, Jan - Hulicius, Eduard - Pangrác, Jiří
Deep levels in GaAs due to Si .delta. doping.
Journal of Applied Physics. Roč. 88, č. 11 (2000), s. 6488-6494. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA ČR GA202/99/0410; GA AV ČR IAA1010806; GA AV ČR IAA1010807
Impact factor: 2.180, year: 2000
http://hdl.handle.net/11104/0031058
Number of the records: 1