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Electron mobility in .I.n./I.-GaAs at low-temperature impurity breakdown
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SYSNO ASEP 0133004 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Electron mobility in .I.n./I.-GaAs at low-temperature impurity breakdown Author(s) Novák, Vít (FZU-D) RID, ORCID
Cukr, Miroslav (FZU-D)
Schowalter, D. (DE)
Prettl, W. (DE)Source Title Physical Review B - ISSN 0163-1829
Roč. 62, č. 24 (2000), s. 16768-16772Number of pages 5 s. Language eng - English Country US - United States Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects IAA1010011 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z1010914 - FZU-D Annotation Using a combination of the standard Hall technique and the photoluminescence imaging of galvanomagnetic transport, free-electron density and mobility have been measured in the regime of filamentary current flow after the electric breakdown of n-GaAs at the temperature of liquid helium. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2001
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