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Interfernce laser crystallization of microcrystalline silicon using asymmetric beam intensities

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    0132975 - FZU-D 20000334 RIV NL eng J - Journal Article
    Rezek, Bohuslav - Nebel, C. M. - Stutzmann, M.
    Interfernce laser crystallization of microcrystalline silicon using asymmetric beam intensities.
    Journal of Non-Crystalline Solids. 266-269, - (2000), s. 650-653. ISSN 0022-3093. E-ISSN 1873-4812
    R&D Projects: GA AV ČR IAA1010809; GA ČR GA202/98/0669
    Institutional research plan: CEZ:AV0Z1010914
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.269, year: 2000

    Periodic interference patterns formed by two laser beams of different intensities are used to crystallize films of amorphous and crystalline silicon with nanometer sized crystallites.
    Permanent Link: http://hdl.handle.net/11104/0030967

     
     

Number of the records: 1  

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