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Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas

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    SYSNO ASEP0132974
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JOstatní články
    TitleAnisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
    Author(s) Nakahata, K. (JP)
    Kamiya, T. (JP)
    Fortmann, C. M. (JP)
    Shimizu, I. (JP)
    Stuchlíková, Hana (FZU-D)
    Fejfar, Antonín (FZU-D) RID, ORCID, SAI
    Kočka, Jan (FZU-D) RID, ORCID, SAI
    Source TitleJournal of Non-Crystalline Solids. - : Elsevier - ISSN 0022-3093
    266-269, - (2000), s. 341-346
    Number of pages6 s.
    Languageeng - English
    CountryNL - Netherlands
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsIAA1010809 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    GA202/98/0669 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z1010914 - FZU-D
    AnnotationStructural and transport anisotropy of low temperature polycrystalline silicon were studied. Poly-Si films with (220) preferential orientation were fabricated by very-high-frequency chemical vapor deposition from SiF4 and H2 mixtures.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2001

Number of the records: 1  

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