Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas

Name: Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
Availability: OutOfStock

Nakahata, K.; Kamiya, T.; Fortmann, C. M.; Shimizu, I.; Stuchlíková, Hana; Fejfar, Antonín; Kočka, Jan

Number of the records: 1

Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas

1.

SYSNO ASEP	0132974
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
Author(s)	Nakahata, K. (JP) Kamiya, T. (JP) Fortmann, C. M. (JP) Shimizu, I. (JP) Stuchlíková, Hana (FZU-D) Fejfar, Antonín (FZU-D)_{RID, ORCID, SAI} Kočka, Jan (FZU-D)_{RID, ORCID, SAI}
Source Title	Journal of Non-Crystalline Solids. - : Elsevier - ISSN 0022-3093 266-269, - (2000), s. 341-346
Number of pages	6 s.
Language	eng - English
Country	NL - Netherlands
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	IAA1010809 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	GA202/98/0669 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z1010914 - FZU-D
Annotation	Structural and transport anisotropy of low temperature polycrystalline silicon were studied. Poly-Si films with (220) preferential orientation were fabricated by very-high-frequency chemical vapor deposition from SiF4 and H2 mixtures.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2001

Number of the records: 1