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Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
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SYSNO ASEP 0132974 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas Author(s) Nakahata, K. (JP)
Kamiya, T. (JP)
Fortmann, C. M. (JP)
Shimizu, I. (JP)
Stuchlíková, Hana (FZU-D)
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Kočka, Jan (FZU-D) RID, ORCID, SAISource Title Journal of Non-Crystalline Solids. - : Elsevier - ISSN 0022-3093
266-269, - (2000), s. 341-346Number of pages 6 s. Language eng - English Country NL - Netherlands Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects IAA1010809 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GA202/98/0669 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z1010914 - FZU-D Annotation Structural and transport anisotropy of low temperature polycrystalline silicon were studied. Poly-Si films with (220) preferential orientation were fabricated by very-high-frequency chemical vapor deposition from SiF4 and H2 mixtures. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2001
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