Local electronic transport in microrystalline silicon observed by combined atomic force microscopy

Number of the records: 1

SYSNO ASEP	0132973
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Local electronic transport in microrystalline silicon observed by combined atomic force microscopy
Author(s)	Fejfar, Antonín (FZU-D)_{RID, ORCID, SAI} Rezek, Bohuslav (FZU-D)_{RID, ORCID} Knápek, Petr (FZU-D) Stuchlík, Jiří (FZU-D)_{RID, ORCID} Kočka, Jan (FZU-D)_{RID, ORCID, SAI}
Source Title	Journal of Non-Crystalline Solids. - : Elsevier - ISSN 0022-3093 266-269, - (2000), s. 309-314
Number of pages	6 s.
Language	eng - English
Country	NL - Netherlands
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	IAA1010809 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	GA202/98/0669 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z1010914 - FZU-D
Annotation	Atomic force microscopy with conductive cantilever was use to map local conductance of the microcrystalline silicon t different stages of growth.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2001

Number of the records: 1