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Local electronic transport in microrystalline silicon observed by combined atomic force microscopy

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    0132973 - FZU-D 20000332 RIV NL eng J - Journal Article
    Fejfar, Antonín - Rezek, Bohuslav - Knápek, Petr - Stuchlík, Jiří - Kočka, Jan
    Local electronic transport in microrystalline silicon observed by combined atomic force microscopy.
    Journal of Non-Crystalline Solids. 266-269, - (2000), s. 309-314. ISSN 0022-3093. E-ISSN 1873-4812
    R&D Projects: GA AV ČR IAA1010809; GA ČR GA202/98/0669
    Grant - others:JP(XC) NEDO
    Institutional research plan: CEZ:AV0Z1010914
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.269, year: 2000

    Atomic force microscopy with conductive cantilever was use to map local conductance of the microcrystalline silicon t different stages of growth.
    Permanent Link: http://hdl.handle.net/11104/0030965

     
     

Number of the records: 1  

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