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Microwave-induced patterns in .I.n./I.-GaAs and their photoluminiscence

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    0132882 - FZU-D 20000137 RIV US eng J - Journal Article
    Bel'kov, V. V. - Hirschinger, J. - Schowalter, D. - Niedernostheide, F. J. - Ganichev, S. D. - Prettl, W. - Mac Mathúna, D. - Novák, Vít
    Microwave-induced patterns in .I.n./I.-GaAs and their photoluminiscence.
    Physical Review. B. Roč. 61, č. 20 (2000), s. 13698-13702. ISSN 0163-1829
    Institutional research plan: CEZ:AV0Z1010914
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 3.065, year: 2000

    Using the technique of photoluminescence imaging, self-organized patterns of high-electron density in homogenous n-GaAs layers under homogenous microwave irradiation are studied.
    Permanent Link: http://hdl.handle.net/11104/0030878


     
     

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