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Intrinsic microcrystalline silicon (.mu.c-Si:H) deposited by VHF-GD (very high frequency-glow discharge): a new material for photovoltaic and optoelectronics
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SYSNO ASEP 0132784 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Intrinsic microcrystalline silicon (.mu.c-Si:H) deposited by VHF-GD (very high frequency-glow discharge): a new material for photovoltaic and optoelectronics Author(s) Shah, A. (CH)
Vallat-Sauvain, E. (CH)
Torres, P. (CH)
Meier, J. (CH)
Kroll, U. (CH)
Hof, C. (CH)
Droz, C. (CH)
Goerlitzer, M. (CH)
Wyrsch, N. (CH)
Vaněček, Milan (FZU-D) RIDSource Title Materials Science and Engineering B-Advanced Functional Solid-State Materials. - : Elsevier - ISSN 0921-5107
69-70, - (2000), s. 219-226Number of pages 8 s. Language eng - English Country NL - Netherlands Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects OK 268 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z1010914 - FZU-D Annotation The development of microc-Si:H technology and the introduction of intrinsic [i] microc-Si:H as photovoltaically active naterial is retraced. The present paper will give an overview of the known properties related to this "new" thin -film semiconductor material. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2001
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