Current filament patterns in .I.n./I.-GaAs layers with different contact geometries

Number of the records: 1

SYSNO ASEP	0132771
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Current filament patterns in .I.n./I.-GaAs layers with different contact geometries
Author(s)	Hirschinger, J. (DE) Niedernostheide, F. J. (DE) Prettl, W. (DE) Novák, Vít (FZU-D)_{RID, ORCID}
Source Title	Physical Review B - ISSN 0163-1829 Roč. 61, č. 3 (2000), s. 1952-1958
Number of pages	7 s.
Language	eng - English
Country	US - United States
Subject RIV	BM - Solid Matter Physics ; Magnetism
CEZ	AV0Z1010914 - FZU-D
Annotation	In thin n-GaAs epitaxial layers current filament patterns formed by low-temperature impurity breakdown have been visualized for different contact geometries.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2001

Number of the records: 1