Number of the records: 1
Influence of dopant ions on traps and recombination centres in lead tungstate
- 1.0132744 - FZU-D 20000300 RIV RU eng C - Conference Paper (international conference)
Vedda, A. - Martini, M. - Meinardi, F. - Nikl, Martin - Mihóková, Eva - Pazzi, G.P. - Fabeni, P. - Usuki, Y. - Baccaro, S.
Influence of dopant ions on traps and recombination centres in lead tungstate.
Proceedings of The Fifth Conference on Inorganic Scintillators and Their Applications. Moscow: Faculty of Physics M.V. Lomonosov Moscow State University, 2000 - (Mikhailin, V.), s. 309-314. ISBN 5-8279-0007-9.
[International Conference on Inorganic Scintillators and Their Applications - SCINT99 /5./. Moscow (RU), 16.08.1999-20.08.1999]
Institutional research plan: CEZ:AV0Z1010914
Subject RIV: BM - Solid Matter Physics ; Magnetism
Traps and recombination centres in lead tungstate have been investigated by wavelength resolved Thermaly Stimulated Luminescence measurements after X-ray irradiation at 10K and at 90K.
Permanent Link: http://hdl.handle.net/11104/0030748
Number of the records: 1