0132737 - FZU-D 20000293 RIV CZ eng J - Journal Article
Turčičová, Hana - Prachařová, Jarmila - Červená, Jarmila - Vacík, Jiří
Sheet resistance of LiNbO₃ wafers processed in radio-ferquency plasma of hydrogen.
Czechoslovak Journal of Physics. Roč. 50, S3 (2000), s. 461-465. ISSN 0011-4626.
[Symposium on Plasma Physics and Technology /19./. Praha, 06.06.2000-09.06.2000]
R&D Projects: GA ČR GA202/98/1285
Grant - others:IAEA coord. res.proj.(XX) CZR10031
Institutional research plan: CEZ:AV0Z1010914
Subject RIV: BL - Plasma and Gas Discharge Physics
Impact factor: 0.298, year: 2000

At a pressure of 0.5 torr and RF input power of 250W a surface layer of approximately 0.5 micrm on the LiNbO3 wafer was created in which the niobate structure was strongly injured. The sheet resistance was measured and reviewed a semiconducting character.
Permanent Link: http://hdl.handle.net/11104/0000584