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Electroluminiscence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/ N-GaSb heterostructures

  1. 1.
    MOISEEV, K. D., MIKHAILOVA, M. P., STOYANOV, N. D., YAKOVLEV, Y. P., HULICIUS, E., ŠIMEČEK, T., OSWALD, J., PANGRÁC, J. Electroluminiscence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/ N-GaSb heterostructures. Journal of Applied Physics. 1999, 86(11), 6264-6268. ISSN 0021-8979. E-ISSN 1089-7550.

Number of the records: 1  

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