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Electroluminiscence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/ N-GaSb heterostructures
- 1.MOISEEV, K. D., MIKHAILOVA, M. P., STOYANOV, N. D., YAKOVLEV, Y. P., HULICIUS, Eduard, ŠIMEČEK, Tomislav, OSWALD, Jiří, PANGRÁC, Jiří. Electroluminiscence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/ N-GaSb heterostructures. Journal of Applied Physics. 1999, 86(11), 6264-6268. ISSN 0021-8979. E-ISSN 1089-7550.
Number of the records: 1