Number of the records: 1  

Charge screening around Si dopant atoms in GaAs by X-STM

  1. 1.
    SYSNO0132494
    TitleCharge screening around Si dopant atoms in GaAs by X-STM
    Author(s) Pacherová, Oliva (FZU-D) RID, ORCID
    Slezák, Jiří (FZU-D)
    Cukr, Miroslav (FZU-D)
    Bartoš, Igor (FZU-D) RID, ORCID
    Source Title Czechoslovak Journal of Physics. Roč. 49, č. 11 (1999), s. 4736C-4739C. - : Springer
    Conference Symposium on Surface Physics /7./, Třešť, 28.06.1999-02.07.1999
    Document TypeČlánek v odborném periodiku
    Grant GA102/99/0415 GA ČR - Czech Science Foundation (CSF)
    Kontakt-090, CZ - Czech Republic
    CEZAV0Z1010914 - FZU-D
    Languageeng
    CountryCZ
    Permanent Linkhttp://hdl.handle.net/11104/0000567
     

Number of the records: 1  

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