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Charge screening around Si dopant atoms in GaAs by X-STM

    1.
    SYSNO ASEP0132494
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JOstatní články
    TitleCharge screening around Si dopant atoms in GaAs by X-STM
    Author(s) Pacherová, Oliva (FZU-D) RID, ORCID
    Slezák, Jiří (FZU-D)
    Cukr, Miroslav (FZU-D)
    Bartoš, Igor (FZU-D) RID, ORCID
    Source TitleCzechoslovak Journal of Physics. - : Springer - ISSN 0011-4626
    Roč. 49, č. 11 (1999), s. 4736C-4739C
    Number of pages4 s.
    ActionSymposium on Surface Physics /7./
    Event date28.06.1999-02.07.1999
    VEvent locationTřešť
    CountryCZ - Czech Republic
    Languageeng - English
    CountryCZ - Czech Republic
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGA102/99/0415 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z1010914 - FZU-D
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2000

Number of the records: 1  

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