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Charge screening around Si dopant atoms in GaAs by X-STM
- 1.PACHEROVÁ, O., SLEZÁK, J., CUKR, M., BARTOŠ, I. Charge screening around Si dopant atoms in GaAs by X-STM. Czechoslovak Journal of Physics. 1999, 49(11), 4736C-4739C. ISSN 0011-4626.
Number of the records: 1