Number of the records: 1  

Effect of hydrogen on the growth kinetics of Si(001) during GSMBE from disilane

  1. 1.
    0131953 - FZU-D 980050 RIV NL eng J - Journal Article
    Mizushima, K. - Vvedensky, D. D. - Šmilauer, Pavel - Zangwill, A. - Zhang, J. - Joyce, B. A.
    Effect of hydrogen on the growth kinetics of Si(001) during GSMBE from disilane.
    Journal of Crystal Growth. 175-176, - (1997), s. 509-513. ISSN 0022-0248. E-ISSN 1873-5002
    Impact factor: 1.259, year: 1997
    Permanent Link: http://hdl.handle.net/11104/0029995
     

Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.