Number of the records: 1  

Direct growth of heteroepitaxial CuInSe2 layer on Si substrates

  1. 1.
    SYSNO ASEP0131791
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JOstatní články
    TitleDirect growth of heteroepitaxial CuInSe2 layer on Si substrates
    Author(s) Tiwari, A. N. (CH)
    Blunier, S. (CH)
    Kessler, K. (CH)
    Železný, Vladimír (FZU-D) RID, ORCID
    Zogg, H. (CH)
    Source TitleApplied Physics Letters. - : AIP Publishing - ISSN 0003-6951
    Roč. 65, č. 18 (1994), s. 2299-?
    Languageeng - English
    CountryUS - United States
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing1999

Number of the records: 1  

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