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Anomalous Hall resistance in Si(001) high mobility inversion layers at high electron concentrations
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$a Anomalous Hall resistance in Si(001) high mobility inversion layers at high electron concentrations 463 -1
$1 001 cav_un_epca*0257437 $1 011 $a 0375-9601 $e 1873-2429 $1 200 1 $a Physics Letters. A $v Roč. 217, - (1996), s. 335-339 $1 210 $c Elsevier 700 -1
$3 cav_un_auth*0046087 $a Semechinski $b S. $y RU $4 070 701 -1
$3 cav_un_auth*0100519 $a Smrčka $b Ludvík $p FZU-D $w Spintronics and Nanoelectronics $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0100527 $a Stehno $b Josef $p FZU-D $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0046088 $a Borzenets $b V. $y RU $4 070
Number of the records: 1