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Anomalous Hall resistance in Si(001) high mobility inversion layers at high electron concentrations
- 1.0131022 - FZU-D 960377 RIV NL eng J - Journal Article
Semechinski, S. - Smrčka, Ludvík - Stehno, Josef - Borzenets, V.
Anomalous Hall resistance in Si(001) high mobility inversion layers at high electron concentrations.
Physics Letters. A. Roč. 217, - (1996), s. 335-339. ISSN 0375-9601. E-ISSN 1873-2429
R&D Projects: GA ČR GA202/96/0036
Impact factor: 1.241, year: 1996
Permanent Link: http://hdl.handle.net/11104/0029115
Number of the records: 1