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Contrast Generation in Low Energy SEM Imaging of Doped Semiconductor
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SYSNO ASEP 0109047 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Contrast Generation in Low Energy SEM Imaging of Doped Semiconductor Title Tvorba kontrastu při zobrazení dopovaného polovodiče v nízkoenergiovém REM Author(s) Mika, Filip (UPT-D) RID, SAI, ORCID
Frank, Luděk (UPT-D) RID, SAI, ORCIDSource Title Proceedings of the 9th International Seminar Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. - Brno : Institute of Scientific Instruments AS CR, 2004 / Müllerová I. - ISBN 80-239-3246-2 Pages s. 51-52 Number of pages 2 s. Action Recent Trends /9./ in Charged Particle Optics and Surface Physics Instrumentation Event date 12.07.2004-16.07.2004 VEvent location Skalský Dvůr Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords low energy SEM ; doped semiconductor Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects KJB2065301 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) Annotation Functional details of semiconductor structures keep decreasing in size. Among the structure elements the locally doped patterns play crucial role so that tools are needed for their observation. For fast diagnosis and quality check of the semiconductor structures the scanning electron microscope is useful because of its wide range of magnification, availability of different signal modes, speed of data acquisition and nondestructive nature of the technique in general, especially at low voltage operations. The dopant concentration in semiconductor is quantitatively determined via acquisition of signal of the secondary electron (SE) emission in such a way that the image contrast is measured between areas of different type or rate of doping Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2005
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