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Contrast Generation in Low Energy SEM Imaging of Doped Semiconductor

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    SYSNO ASEP0109047
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitleContrast Generation in Low Energy SEM Imaging of Doped Semiconductor
    TitleTvorba kontrastu při zobrazení dopovaného polovodiče v nízkoenergiovém REM
    Author(s) Mika, Filip (UPT-D) RID, SAI, ORCID
    Frank, Luděk (UPT-D) RID, SAI, ORCID
    Source TitleProceedings of the 9th International Seminar Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. - Brno : Institute of Scientific Instruments AS CR, 2004 / Müllerová I. - ISBN 80-239-3246-2
    Pagess. 51-52
    Number of pages2 s.
    ActionRecent Trends /9./ in Charged Particle Optics and Surface Physics Instrumentation
    Event date12.07.2004-16.07.2004
    VEvent locationSkalský Dvůr
    CountryCZ - Czech Republic
    Event typeWRD
    Languageeng - English
    CountryCZ - Czech Republic
    Keywordslow energy SEM ; doped semiconductor
    Subject RIVJA - Electronics ; Optoelectronics, Electrical Engineering
    R&D ProjectsKJB2065301 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    AnnotationFunctional details of semiconductor structures keep decreasing in size. Among the structure elements the locally doped patterns play crucial role so that tools are needed for their observation. For fast diagnosis and quality check of the semiconductor structures the scanning electron microscope is useful because of its wide range of magnification, availability of different signal modes, speed of data acquisition and nondestructive nature of the technique in general, especially at low voltage operations. The dopant concentration in semiconductor is quantitatively determined via acquisition of signal of the secondary electron (SE) emission in such a way that the image contrast is measured between areas of different type or rate of doping
    WorkplaceInstitute of Scientific Instruments
    ContactMartina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
    Year of Publishing2005
Number of the records: 1  

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