Determination of carrier profiles on bevelled GaAs structures by PCIV method
1.
SYSNO ASEP
0105980
Document Type
J - Journal Article
R&D Document Type
Journal Article
Subsidiary J
Ostatní články
Title
Determination of carrier profiles on bevelled GaAs structures by PCIV method
Title
Určení profilu nosičů na zešikmené GaAs struktuře pomocí PCIV metody
Author(s)
Kinder, R. (SK) Srnánek, R. (SK) Hulényi, L. (SK) Walachová, Jarmila (URE-Y) Tlaczala, M. (PL) Sciana, B. (PL) Radziewicz, D. (PL)
Source Title
Journal of Electrical Engineering - Elektrotechnický časopis. - : Slovenská technická univerzita v Bratislave
- ISSN 1335-3632
Roč. 55, 9-10 (2004), s. 261-264
Number of pages
4 s.
Language
eng - English
Country
SK - Slovakia
Keywords
impurity distribution
Subject RIV
BM - Solid Matter Physics ; Magnetism
R&D Projects
KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
Annotation
Determination of free charge profiles of GaAs on a bevelled surface by PCIV is presented. The bevelled structure were prepared by chemical etching. The results are compared with the electrochemical capacitance-voltage technique.
