Structural modification of InAs based materials for mid-infrared optoelectronic devices
1.
SYSNO ASEP
0105964
Document Type
C - Proceedings Paper (int. conf.)
R&D Document Type
Conference Paper
Title
Structural modification of InAs based materials for mid-infrared optoelectronic devices
Title
Tvarování struktur na bázi InAs pro optoelektronické součástky ve střední infračervené oblasti spekra
Author(s)
Nohavica, Dušan (URE-Y) Krier, A. (GB)
Source Title
ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems. - Piscataway : IEEE, 2004 / Osvald J. ; Haščík Š.
- ISBN 0-7803-8535-7
Pages
s. 203-206
Number of pages
4 s.
Action
Advanced Semiconductor Devices and Microsystems - ASDAM'04 /5./
JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects
ME 610 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
CEZ
AV0Z2067918 - URE-Y
Annotation
Anisotropic and isotropic etchants are very useful in preparation of InAs based devices. Polycarbozylic acids are very interesting as structural and selective etchants and Br2-based systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors. We investigated both systems with a view towards applications in InAs based optoelectronic devices.
