0105964 - URE-Y 20040124 RIV US eng C - Conference Paper (international conference)
Nohavica, Dušan - Krier, A.
Structural modification of InAs based materials for mid-infrared optoelectronic devices.
[Tvarování struktur na bázi InAs pro optoelektronické součástky ve střední infračervené oblasti spekra.]
ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Piscataway: IEEE, 2004 - (Osvald, J.; Haščík, Š.), s. 203-206. ISBN 0-7803-8535-7.
[Advanced Semiconductor Devices and Microsystems - ASDAM'04 /5./. Smolenice (SK), 17.10.2004-21.10.2004]
R&D Projects: GA MŠMT ME 610
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductors * photoluminescence * galvanomagnetic effects
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0013149