- Characterization of InP epitaxial layers for use in radiation detecti…
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Characterization of InP epitaxial layers for use in radiation detection

  1. 1.
    SYSNO0105961
    TitleCharacterization of InP epitaxial layers for use in radiation detection
    TitleCharakterizace epitaxních vrstev InP, vhodných pro detekci ionizujícího záření
    Author(s) Zavadil, Jiří (URE-Y) RID
    Žďánský, Karel (URE-Y)
    Procházková, Olga (URE-Y)
    Kozak, Halina (URE-Y)
    Source TitleASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems. s. 247-250. - Piscataway : IEEE, 2004 / Osvald J. ; Haščík Š.
    Conference Advanced Semiconductor Devices and Microsystems - ASDAM'04 /5./, Smolenice, 17.10.2004-21.10.2004
    Document TypeKonferenční příspěvek (zahraniční konf.)
    Grant GA102/03/0379 GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic
    IBS2067354 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR), CZ - Czech Republic
    KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR), CZ - Czech Republic
    Languageeng
    CountryUS
    Keywords semiconductors * photoluminescence * galvanomagnetic effects
    Permanent Linkhttp://hdl.handle.net/11104/0013146
     
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