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Characterization of InP epitaxial layers for use in radiation detection
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SYSNO 0105961 Title Characterization of InP epitaxial layers for use in radiation detection Title Charakterizace epitaxních vrstev InP, vhodných pro detekci ionizujícího záření Author(s) Zavadil, Jiří (URE-Y) RID
Žďánský, Karel (URE-Y)
Procházková, Olga (URE-Y)
Kozak, Halina (URE-Y)Source Title ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems. s. 247-250. - Piscataway : IEEE, 2004 / Osvald J. ; Haščík Š. Conference Advanced Semiconductor Devices and Microsystems - ASDAM'04 /5./, Smolenice, 17.10.2004-21.10.2004 Document Type Konferenční příspěvek (zahraniční konf.) Grant GA102/03/0379 GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic IBS2067354 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR), CZ - Czech Republic KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR), CZ - Czech Republic Language eng Country US Keywords semiconductors * photoluminescence * galvanomagnetic effects Permanent Link http://hdl.handle.net/11104/0013146
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