Number of the records: 1  

Preparation of doped and co-doped indium phosphide single crystals

  1. 1.
    SYSNO ASEP0105894
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitlePreparation of doped and co-doped indium phosphide single crystals
    TitlePříprava dopovaných a kodopovaných monokrystalů fosfidu inditého
    Author(s) Pekárek, Ladislav (FZU-D)
    Žďánský, Karel (URE-Y)
    Source TitleDevelopment of Materials Science in Research and Education. Proceedings of the 14th Joint Seminar. - Praha : MAXDORF, 2004 / Nitsch K. ; Rodová M. - ISBN 80-7345-032-1
    Pagess. 50-51
    Number of pages2 s.
    ActionDevelopment of Materials Science in Research and Education - DMS-RE 2004 /14./
    Event date31.08.2004-03.09.2004
    VEvent locationLednice
    CountryCZ - Czech Republic
    Event typeCST
    Languageeng - English
    CountryCZ - Czech Republic
    Keywordscrystal growth ; semiconductor doping ; radiation detection
    Subject RIVJB - Sensors, Measurment, Regulation
    R&D ProjectsIBS2067354 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z2067918 - URE-Y
    AnnotationIndium phosphide crystals doped with various impurity atoms were grown by liquid encapsulation Czochralski method. The wafers of the grown crystals were characterized by resistivity an Hall measurements and their suitability for radiation detection was assessed.
    WorkplaceInstitute of Radio Engineering and Electronics
    ContactPetr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488
    Year of Publishing2005
Number of the records: 1  

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