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Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by liquid phase epitaxy
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SYSNO ASEP 0105872 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by liquid phase epitaxy Title Vliv příměsi Pr, Dy a Tb na fyzikální vlastnosti vrstev InP připravených kapalnou epitaxí Author(s) Procházková, Olga (URE-Y)
Zavadil, Jiří (URE-Y) RID
Žďánský, Karel (URE-Y)
Grym, Jan (URE-Y)Source Title Proceedings 6th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies - EXMATEC'2002. - Weinheim : WileyVCH Verlag, 2003 / Stutzmann M. - ISBN 3-527-40436-8 Pages s. 950-955 Number of pages 6 s. Action EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./ Event date 26.05.2002-29.05.2002 VEvent location Budapest Country HU - Hungary Event type EUR Language eng - English Country DE - Germany Keywords rare earth compounds ; semiconductors ; liqiud phase epitaxial growth Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) Annotation The characterization of InP (>10μm) layers prepared by LPE with Pr, Dy or Tb (REE) addition in the melt is reported. The conductivity has been changed from n to p type when REE exceeded certain concentration limit (0.15 wt per cent for Pr, 0.05 wt per cent for Tb and 0.03 for Dy). Comparison of PL peaks of n- and p- type conductivity laeyrs with obtained electrical data lead to conclusion that the dominant acceptor impurity for the n- and p-n type crossover is Ge for Pr addition and Mn for Tb and Dy addition. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2005
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