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Raman Spectra of Erbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering

SYSNO ASEP	0105584
Document Type	G - Proceedings (int. conf.)
R&D Document Type	Není vybrán druh dokumentu
Title	Raman Spectra of Erbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering
Title	Ramanovská spektra galium nitridových vrstev dopovaných erbiem a připravených magnetronovým naprašováním
Author(s)	Prajzler, V. (CZ) Schröfel, J. (CZ) Hüttel, I. (CZ) Špirková, J. (CZ) Machovič, V. (CZ) Hamáček, J. (CZ) Peřina, Vratislav (UJF-V)_RID
Issue data	Praha: Czech Technical University, 2004
ISBN	80-239-2835-X
Number of pages	6 s.
Action	Proceedings of the European Microelectronics and Packaging Symposium with Table Top Exibition /3./
Event date	16.06.2003-18.06.2003
VEvent location	Praha
Country	CZ - Czech Republic
Event type	EUR
Language	eng - English
Country	CZ - Czech Republic
Keywords	Raman spectra ; erbium ; GaN
Subject RIV	BG - Nuclear, Atomic and Molecular Physics, Colliders
R&D Projects	GA104/03/0385 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z1048901 - UJF-V
Annotation	The paper presents the influence of erbium ions content in gallium nitride layers on RAMAN spectra.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2005

Number of the records: 1