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Erbium doped gallium nitride thin films
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SYSNO ASEP 0105582 Document Type G - Proceedings (int. conf.) R&D Document Type Není vybrán druh dokumentu Title Erbium doped gallium nitride thin films Title Galium-nitridové vrstvy dopované erbiem Author(s) Prajzler, V. (CZ)
Hüttel, I. (CZ)
Špirková, J. (CZ)
Schröfel, J. (CZ)
Machovič, V. (CZ)
Peřina, Vratislav (UJF-V) RID
Říha, K. (ed. CZ)
Andrejsek, J. (ed. CZ)
Houkal, L. (ed. CZ)
Husník, L. (CZ)
Kabelik, K. (ed.)Issue data Praha: Czech Technical University, 2004 ISBN 80-01-02945-X Number of pages 2 s. Action CTU Reports Proceedings of Workshop 2004 Event date 10.02.2003-12.02.2003 VEvent location Praha Country CZ - Czech Republic Event type EUR Language eng - English Country CZ - Czech Republic Issue A Keywords thin films ; erbium ; GaN Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders R&D Projects GA104/03/0385 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z1048901 - UJF-V Annotation The paper describes the preparation and properties of gallium nitride layers with erbiu content. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2005
Number of the records: 1