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Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium

  1. 1.
    Peřina, Vratislav - Macková, Anna - Hnatowicz, Vladimír - Prajzler, V. - Machovič, V. - Matějka, P. - Schröfel, J.
    Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium.
    Surface and Interface Analysis. Roč. 36, č. 8 (2004), s. 952-954. ISSN 0142-2421. E-ISSN 1096-9918
    R&D Projects: GA ČR GA104/03/0387
    Impact factor: 1.209, year: 2004
    http://hdl.handle.net/11104/0012816
Number of the records: 1  

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