Number of the records: 1
Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium
- 1.Peřina, Vratislav - Macková, Anna - Hnatowicz, Vladimír - Prajzler, V. - Machovič, V. - Matějka, P. - Schröfel, J.
Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium.
Surface and Interface Analysis. Roč. 36, č. 8 (2004), s. 952-954. ISSN 0142-2421. E-ISSN 1096-9918
R&D Projects: GA ČR GA104/03/0387
Impact factor: 1.209, year: 2004
http://hdl.handle.net/11104/0012816
Number of the records: 1