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Role of reactive metals in Ge/Pd/GaAs contact structures
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SYSNO ASEP 0101833 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Role of reactive metals in Ge/Pd/GaAs contact structures Title Úloha reaktivních kovů v Ge/Pd/GaAs kontaktních strukturách Author(s) Macháč, P. (CZ)
Peřina, Vratislav (UJF-V) RIDSource Title Microelectronic Engineering. - : Elsevier - ISSN 0167-9317
Roč. 65, č. 3 (2003), s. 335-343Number of pages 9 s. Language eng - English Country NL - Netherlands Keywords gallium arsenide ; ohmic contact ; contact resistivity Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders R&D Projects KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z1048901 - UJF-V Annotation This article describes the behavior of the contact structures of the Ge/Pd type with addition of a very thin layer of a reactive metal (Ti, Ni, Cr) deposited on the surface of the GaAs plate prior to the metallization. The most suitable structure by the contact resistivity and thermal stability is Ge(40)/Pd(4)/Ti(0.5). This structure showed minimal contact resistivity 2.66 X 10(-6) Omegacm(2). During the reliability test carried out at 400 degreesC, the contact resistivity only doubled after 10 h. The RBS measurement results show little mixing between titanium and GaAs. Chromium and nickel reacted with GaAs substrate very strongly. As presumed, the deposited reactive metals reduce the natural oxides on the GaAs surface, the effect of titanium being the most significant Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2005
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