Si-substitutional defects on the .alfa.-Sn/Si(111)-(.sqrt. 3 x. sqrt. 3) surface

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SYSNO ASEP	0100708
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Si-substitutional defects on the .alfa.-Sn/Si(111)-(.sqrt. 3 x. sqrt. 3) surface
Title	Si-substituční defekt na Sn/Si(111)-(.sqrt. 3 x .sqrt. 3) povrchu
Author(s)	Kaminski, W. (PL) Jelínek, Pavel (FZU-D)_{RID, ORCID} Pérez, R. (ES) Flores, F. (ES) Ortega, J. (ES)
Source Title	Applied Surface Science. - : Elsevier - ISSN 0169-4332 Roč. 234, - (2004), s. 286-291
Number of pages	6 s.
Language	eng - English
Country	NL - Netherlands
Keywords	first principles DFT ; local- orbital method ; Sn/Si(111) surface
Subject RIV	BM - Solid Matter Physics ; Magnetism
CEZ	AV0Z1010914 - FZU-D
Annotation	We use a first-principle DFT local-orbital method and analyze Si-defects on a large Sn/Si(111) surface unit-cell, corresponding to a defect concentration as low as 3.7%
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2005

Number of the records: 1