Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

Name: Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy
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Kindl, Dobroslav; Toušková, J.; Hulicius, Eduard; Pangrác, Jiří; Šimeček, Tomislav; Jurka, Vlastimil; Hubík, Pavel; Mareš, Jiří J.; Krištofik, Jozef

Number of the records: 1

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

1.

SYSNO	0100050
Title	Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy
Title	Vliv rychlosti růstu na transport náboje v homogenních přechodech z GaSb připravených epitaxí z organokovů
Author(s)	Kindl, Dobroslav (FZU-D)_RID Toušková, J. (CZ) Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Šimeček, Tomislav (FZU-D) Jurka, Vlastimil (FZU-D)_{RID, ORCID} Hubík, Pavel (FZU-D)_{RID, ORCID} Mareš, Jiří J. (FZU-D)_{RID, ORCID} Krištofik, Jozef (FZU-D)_RID
Source Title	Journal of Applied Physics. Roč. 95, č. 4 (2004), s. 1811-1815. - : AIP Publishing
Document Type	Článek v odborném periodiku
Grant	KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	GA202/03/0410 GA ČR - Czech Science Foundation (CSF)
	IAA1010404 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z1010914 - FZU-D
Language	eng
Country	US
Keywords	GaSb * p-n homojunction * charge transport * native defects
Permanent Link	http://hdl.handle.net/11104/0007557

Number of the records: 1