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Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy
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SYSNO ASEP 0100050 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy Title Vliv rychlosti růstu na transport náboje v homogenních přechodech z GaSb připravených epitaxí z organokovů Author(s) Kindl, Dobroslav (FZU-D) RID
Toušková, J. (CZ)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Šimeček, Tomislav (FZU-D)
Jurka, Vlastimil (FZU-D) RID, ORCID
Hubík, Pavel (FZU-D) RID, ORCID
Mareš, Jiří J. (FZU-D) RID, ORCID
Krištofik, Jozef (FZU-D) RIDSource Title Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 95, č. 4 (2004), s. 1811-1815Number of pages 5 s. Language eng - English Country US - United States Keywords GaSb ; p-n homojunction ; charge transport ; native defects Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GA202/03/0410 GA ČR - Czech Science Foundation (CSF) IAA1010404 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z1010914 - FZU-D Annotation Current-voltage characteristics of GaSb p-n homojunctions prepared by MOVPE were measured in wide temperature range. It was shown that the charge transport is strongly affected by the growth rate of GaSb epitaxial layers Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2005
Number of the records: 1