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Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

  1. 1.
    Kindl, Dobroslav - Toušková, J. - Hulicius, Eduard - Pangrác, Jiří - Šimeček, Tomislav - Jurka, Vlastimil - Hubík, Pavel - Mareš, Jiří J. - Krištofik, Jozef
    Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy.
    Journal of Applied Physics. Roč. 95, č. 4 (2004), s. 1811-1815. ISSN 0021-8979. E-ISSN 1089-7550
    R&D Projects: GA AV ČR KSK1010104; GA ČR GA202/03/0410; GA AV ČR IAA1010404
    Impact factor: 2.255, year: 2004
    http://hdl.handle.net/11104/0007557

Number of the records: 1  

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