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Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

  1. 1.
    KINDL, Dobroslav, TOUŠKOVÁ, J., HULICIUS, Eduard, PANGRÁC, Jiří, ŠIMEČEK, Tomislav, JURKA, Vlastimil, HUBÍK, Pavel, MAREŠ, Jiří J., KRIŠTOFIK, Jozef. Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy. Journal of Applied Physics. 2004, 95(4), 1811-1815. ISSN 0021-8979. E-ISSN 1089-7550.

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